INTEGRAL INDUCTIVE ELEMENTS ON THE BASE OF POLYCRYSTALLINE SILICON FILMSAuthors: Farida F. Kasimova,
Company: Azerbaijan National Aerospace
Date Published: 2/13/2001 Conference: Pan Pacific Symposium
It is discovered that under illumination the induc-tance transformed into a capacitance and the negative resistance region disappeared from the current-voltage curve.
It is shown that inductivity phenomena in poly-crystalline silicon films occur by processes of re-charging of deep levels.
Key words: Polycrystalline silicon films, inductiv-ity, negative capacity, local films, epitaxial growth.
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