Pan Pacific Symposium Conference Proceedings


INTEGRAL INDUCTIVE ELEMENTS ON THE BASE OF POLYCRYSTALLINE SILICON FILMS

Authors: Farida F. Kasimova,
Company: Azerbaijan National Aerospace
Date Published: 2/13/2001   Conference: Pan Pacific Symposium


Abstract: The capacitance-voltage characteristics of epitaxi-ally grown polycrystalline silicon local films were investigated in the frequency range 0,465-10 MHz. A transition in the character of the capacitance from reactive conductivity to inductive behaviour was discovered.

It is discovered that under illumination the induc-tance transformed into a capacitance and the negative resistance region disappeared from the current-voltage curve.

It is shown that inductivity phenomena in poly-crystalline silicon films occur by processes of re-charging of deep levels.

Key words: Polycrystalline silicon films, inductiv-ity, negative capacity, local films, epitaxial growth.



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