Optical Run-Out Correction for Improved Lithography Overlay Accuracy for FOWLP ApplicationsAuthors: Markus Arendt, Matthew Gingerella, Habib Hichri
Company: SUSS MicroTec Photonic Systems Inc.
Date Published: 10/23/2018 Conference: IWLPC (Wafer-Level Packaging)
An active Optical Run-Out Correction and Beam-Steering technology for a full-field UV projection scanner has been developed, that directly translates into a better overlay for errors caused by the embedding of dies in mold compound for Chip-First FOWLP applications, without loss in resolution, printing performance, and resolution. This feature allows compensation of any type of symmetrical run-out or run-in up to +/- 200 ppm, as well as asymmetrical run-out in Y up to 50 ppm. With additional alignment information, the system’s flexibility also allows for other compensation schemes, like trapezoidal or other form of compensation.
In this paper, we will detail the principle and realization of this optical run-out correction technology. Performance data results for magnification error mitigation will be presented, and its effects on overlay, patterning performance, resolution, and throughput will be studied. Other properties of full-field exposure such as non-repeated dies, stitching-free exposure of any die size especially for very large packages for data center applications, and large depth-of-focus are explored. This feature is available on wafer and panel format full-field exposure systems.
FOWLP, Projection Lithography, Run-Out Correction, Overlay Improvement
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