Fan-Out Wafer Processing in the High Density Packaging EraAuthors: David Butler, Chris Jones, Steve Burgess, Tony Wilby and Paul Densley
Company: SPTS Technologies Ltd
Date Published: 10/23/2018 Conference: IWLPC (Wafer-Level Packaging)
Prior to UBM/RDL metallization by physical vapor deposition (PVD), the mold substrate needs to be degassed and native oxide needs to be removed from the metal contacts, within the relatively low thermal budget imposed by the epoxy mold. Due to a lower ion energy, Inductively Couple Plasma (ICP) etch processing induces less heating and lower levels of contamination from any organics on the substrate during the removal of the oxide, than alternative "diode" plasma etching solutions. Data will be presented showing long time between chamber cleans, and how a novel in-situ pasting technique gives low & stable contact resistance.
Fan-Out WLP, FO-WLP, UBM/RDL, Epoxy Mold Compound, Rc.
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