Pan Pacific Symposium Conference Proceedings


Highly Accurate Wiring Fabrication Technologies by Plasma Dry Processes for 3d-Ic and Fan-Out Packaging

Authors: Yasuhiro Morikawa, Takahide Murayama, Toshiyuki Sakuishi, Muneyuki Sato, Akiyoshi Suzuki and Koukou Suu
Company: Global Market & Technology Strategy Division and Institute of Semiconductor and Electronics Technologies ULVAC, Inc.
Date Published: 2/5/2018   Conference: Pan Pacific Symposium


Abstract: Smart ICT (Information and Communication Technology) such as “Big Data”, “Cloud computing” and Smart Functionalities such as Stand-alone Self-activating MEMS/Sensors construct Smart Systems which enable IoT (Internet of Things), IoE (Internet of Everything) thus Smart Society. To realize above-mentioned Smart Technologies, high-density, low-power consumption, wide-bandwidth, fast-operation semiconductor devices as well as smart functional devices enabled by integrating functionalities with advanced semiconductor technologies including CMOS technologies are necessary. High-density Packaging technologies such as 3D, 2.5D packaging scheme basing on TSV (through-Si via) technology and 2.1D PWB packaging are among key technologies to satisfy the requirements from the both smart semiconductor devices and smart functional devices. Meanwhile MEMS/Sensors are required as mutifunctionalities of stand-alone smart devices for wearable devices including smart phone, an important part of Smart Systems. ULVAC has been continuously developing manufacturing solutions for Smart Technologies. In this talk, our highdensity packaging technologies including scallop-free, lowtemperature processed TSV solution for via-last packaging scheme and 2.1D packaging solutions on large panel buildup PWB will be introduced.

Key Words: 

TSV, Si-DRIE, Via-last, 2.1D, PWB panel



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