Pan Pacific Symposium Conference Proceedings


3D IPD On Thru Glass Via Substrate Using Panel Manufacturing Technology For RF Applications

Authors: Satoru Kuramochi1 and Hobie Yun2
Company: Dai Nippon Printing Co., Ltd and Qualcomm Technologies Inc
Date Published: 2/6/2017   Conference: Pan Pacific Symposium


Abstract: As electronic products becomes smaller and thinner with increasing number of functions, the demand for high density and high integration becomes stronger. Glass has many properties that make it an ideal substrate for high integration substrate such as; ultra high resistivity, adjustable thermal expansion (CTE) high modulus, low dielectric constant, low dielectric loss and manufacturability with large panel sizes.

Multi-bands with carrier aggregation, WiFi/GPS coexistence, and LTE-U make RF front end more and more complicated. 3D IPD (integrated passive devices) on Glass substrate technology could be advantage solution include reducing power consumption and small form factor. This paper presents a demonstration of 3D RF front end filters using 3D solenoid inductor with through glass vias (TGV) on Gen1Glass substrate (300mm x 400mm) panel format. For inductors, drastic performance (size and low resistance therefore highquality factor) improvement have been demonstrated by technology evolutions from 3D solenoid using TGV with conformal Cu plating method, achieving low resistance of 2.73mohm per 70um diameter TGV on a 400um thick glass panel. This low-resistance TGV with 1.3mOhm/sq TGV connections on both sides of the glass substrate, record high inductor quality factor of was obtained at 1GHz using three and half turn inductor of 5nH inductance.



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