IWLPC (Wafer-Level Packaging) Conference Proceedings

Electrodeposition of Ø50 × 50 µm Cu Pillars for 3D Stacking Applications

Authors: Zaid El-Mekki, Harold Philipsen, Mia Honore, Aleksandar Radisic, John Slabbekoorn, Herbert Struyf, Marco Arnold, Alexander Fluegel, Dieter Mayer, Iris Shu-Ya Chang
Company: imec and BASF
Date Published: 10/18/2016   Conference: IWLPC (Wafer-Level Packaging)

Abstract: In this work, we demonstrate defect-free plating of Ø50 x 50 µm Cu pillars, on 300 mm wafers, for 3D stacking applications. We also demonstrate the capability to control and tune within-wafer (WIW) and within-die (WID) uniformity of Cu-pillar heights to given application requirements. Furthermore, by adjusting the concentration of plating additives, we are able to modify the shape and morphology of electroplated Cu pillars.

Key Words: 

3D stacking, electrochemical deposition, plating, Cu, pillar, bump, shape, wafer-level, height uniformity, deposition rate

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