Novel WLCSP Technology Solution for Fusion Device of CMOS Integrated Circuit with MEMSAuthors: Takahide Murayama, Toshiyuki Sakuishi, Yasuhiro Morikawa
Company: ULVAC, Inc.; Institute of Semiconductor and Electronics Technologies
Date Published: 10/18/2016 Conference: IWLPC (Wafer-Level Packaging)
It is quietly important to control atmosphere of the sealed cavity with MEMS, there is a possibility that higher-quality controlling technology for atmosphere of sealed cavity is required with WLCSP evolution in future. Conventional MEMS etching method is Bosch etching. In Bosch method, Si is etched to anisotropic profile by using fluorine radical reaction to Si, and sidewall passivation of fluorocarbon polymer.  Due to such etch reaction mechanism, the residues of fluorine and fluorocarbon exist on etched surface, it is possible that these residual will have a negative impact to the cavity atmosphere after sealed. In this paper, as a part of the data acquisition to consider about the management standard of the sealed cavity atmosphere, we started comparison between Bosch and Non-Bosch to investigate whether influence of Si etching method influence to sealed cavity atmosphere or not. In this work, each sample of Bosch and Non-Bosch sample was prepared using by NLD plasma etcher, then, TDS (Thermal Desorption Spectroscopy) analyses were carried out to detect desorption species from etched surface of sample. TDS analyses were conducted each process step; after Si etched, after O2 plasma ashing, and after wet cleaning for fluorocarbon polymer.
IoT, WLCSP, Heterogeneous, Si DRIE, Fluorocarbon polymer removal, Cavity sealing
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