Demonstration of SIC Interposers with High Density and Fine Pitch MicrobumpsAuthors: Hasan Sharifi, Melanie Yajima, Aurelio Lopez, Chuck McGuire, James Li, Zhiwei Xu
Company: HRL Laboratories, LLC and Chi-Tek, Inc.
Date Published: 11/11/2014 Conference: IWLPC (Wafer-Level Packaging)
For the demonstration of 5um and 10um Au microbumps, we have designed and fabricated a fanout on a SiC substrate and chiplets that were fabricated on Si substrates. The arrays of microbumps consist of 50 rows, each with 50 microbumps. The Si chiplets have been hybridized on the SiC interposer using a high precision die bonder. We have conducted a design of experiments in order to determine the correlation between bonding temperature versus bonding force at a fixed bump resistivity. Experimental results indicate that low temperature bonding at higher forces provide a reliable, high-density interconnect. The DC measurements show that the microbumps can achieve a maximum resistance of 65mO per bump transition at a bonding temperature as low as 125°C with high yield. RF measurements of the microbump chains prove low loss (only 0.03dB) per bump at 20GHz. We have also conducted thermal cycling tests (-55°C to 85°C as well as -65°C to 150°C) and we did not observe any significant changes in electrical performance.
Heterogeneous integration, interposer, fine pitch microbump
Members download articles for free:
Not a member yet?
What else do you get when you join SMTA? Read about all of the benefits that go along with membership.
Notice: Sharing of articles is restricted to just your immediate work group. Downloaded papers should not be stored on an external network or shared on the internet.