Room Temperature Temporary Bonding/ Debonding Processes for 2.5/ 3D IntegrationAuthors: Tim McCrone, Stefan Lutter, Thomas Rapps, Tim Griesbach
Company: SUSS MicroTec
Date Published: 11/11/2014 Conference: IWLPC (Wafer-Level Packaging)
For reliable processing of a thinned wafer temporarily bonded to a carrier wafer and subsequent de-bonding of the device wafer, the selected temporary bonding material must satisfy process requirements such as low TTV and stress, high thermal stability, chemical resistance, mechanical strength and ease of de-bonding/ removal after BEOL processing.
Due to availability of several material options, it is challenging for all participants in the 3D supply chain to select and integrate the best process flows for current and future device requirements. This paper will discuss and compare various temporary bonding and room temperature debonding process flows to integrate thin wafer handling for 2.5/3D integration in a freely configurable equipment platform. Since process times, yield and complexity varies greatly between different materials and processes, a cost of ownership model based on process throughputs for multiple process configurations will be discussed. Recent process results showing successful integration of high throughput mechanical and Excimer laser assisted debonding processes will be presented.
3D integration, WLP, temporary bonding, cost analysis, debonding
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