Advanced Technologies & Materials for Packaging of Power Electronic ModulesAuthors: Anton Miric, M. Sc.
Company: Heraeus Materials Technology GmbH and Co. KG
Date Published: 2/11/2014 Conference: Pan Pacific Symposium
The continuous reduction of the active chip mass and consequent increase of power density & junction temperatures drive the need for interconnect materials with improved reliability. This is reinforced by the use of wide band gap chip materials, e.g. SiC, GaN which enable even lower losses and even smaller chips.
This reinforces the use of materials with improved thermal/electrical conductivity & higher melting temperature, e.g. Ag and Cu (vs. Aluminum).
This paper discusses several new interconnect materials: Sintering Technology, Diffusion Soldering, AlCu and Cu Wire Bonding. The functional surfaces of interconnect layers, e.g. on the substrate/lead frame will be discussed as well - for best reliability the interconnect material and the interface layers must be perfectly matched together.
Advanced interconnects, Sintering, Diffusion Soldering, Cu Bonding, Functional Surfaces
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