Reliability of TSV and Wafer-Level Bonding for a 3D Integrable SOI Based MEMS ApplicationAuthors: Torleif André Tollefsen, Maaike M. Visser Taklo, Thor Bakke, Nicolas Lietaer, Per Dalsjø, and Jakob Gakkestad
Company: SINTEF ICT, Vestfold University College, and Norwegian Defence Research Establishment (FFI)
Date Published: 11/5/2012 Conference: IWLPC (Wafer-Level Packaging)
The initial bond strength was high for all sample groups (above 24 MPa). LTS and TSC reduced the bond strength of NiCr/Au metallized samples (more than 50% after LTS), while it remained unchanged for TiW/Au metallized samples. Lowering the bonding temperature from 250 °C to 200 °C increased the bond strength by 10 to 20 %, assumedly due to less residual stress. The electrical resistance of the TSVs with NiCr/Au metallization increased after HTS, while it remained low both after HTS and TSC for the TiW/Au samples. The demonstrated TSV technology with TiW/Au metallization and encapsulation by BCB bonding proves to be well suited for 3D MEMS packaging for harsh environment applications.
BCB, TSV, MEMS switch, harsh environment, wafer-level 3D integration.
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