Simulation and Modeling of Capacitive Coupling Interconnection For 3D Integration
Authors: Yu-Jung Huang, Ph.D., Shen-Li Fu, Ph.D., Yi-Lung Lin and Ming-Kun Chen, Ph.D. Company: I-Shou University and Advanced Semiconductor Engineering Test RD Date Published: 1/18/2011
Pan Pacific Symposium
Abstract: This study presents the modelling of a close capacitive coupling interconnection pad with a lumped circuit representation. The proximity data link is performed via capacitive couplings between the top facing dies for three-dimensional (3D) system integration. The parasitic capacitances of coupling pads are one of the key parameters for the simulation of the signal integrity. Accurate modelling of coupling pad capacitance plays equally important role for system performance evaluation in the quality of the transition signal. In the study, based on High Frequency Structure Simulator (HFSS) tool, 3D electromagnetic (EM) simulations of the capacitive pad between two pads of dies have been simulated. The simulation results show that the effect of cross-coupling between adjacent channels is dependent on substrate characteristic and pads arrangement. This scalable capacitance characteristic enables the prediction and optimization of data-link-coupling performance.
Key words: proximity data link, electromagnetic (EM).