NONDESTRUCTIVE CHARACTERIZATION OF CRITICAL FAILURES IN 3D INTEGRATIONS USING COMPUTED TOMOGRAPHYAuthors: Gyujei Lee, Kang-won Lee, Hyun-joo Kim, Suk-woo Jeon, Kwang-yoo Byun, and Hae-bong Park
Company: Hynix Semiconductor Inc. and SEC Co. Ltd.
Date Published: 10/11/2010 Conference: IWLPC (Wafer-Level Packaging)
Naturally, traditional analysis methods are commercially available for these failure modes: chemical decapsulation for die-cracking and cross-sectional analysis for TSV defects and bump cracking. These techniques, however, are destructive and also have reached performance limits because of drawbacks such as the residual-stress effect in abrupt decapsulation release and the mechanical shock of physical cross-sectioning. Unfortunately, conventional nondestructive analysis (NDA) techniques cannot be directly applied in these cases because of intrinsic measurement limitations. For example, X-ray, a representative NDA source, penetrates ceramic chips well and thus is unavailable for chip-crack detection. Ultrasonic waves, another NDA source, are interfered with by the ceramic epoxy molding filler and so cannot be used for multi-stacked applications, even if ultra-high frequency SAT (scanning acoustic tomography) is used. We have attempted to modify conventional analytic procedures to apply special detection sources or materials in order to overcome these limitations through the computational tomography technique, and we describe several results of this work.
Keywords: CT (Computational Tomography); TSV (through silicon via); High-stacked thin-die packaging; NDA (non-destructive analysis); Oblique and cone-beam scanning.
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