IWLPC (Wafer-Level Packaging) Conference Proceedings


Authors: Gyujei Lee, Kang-won Lee, Hyun-joo Kim, Suk-woo Jeon, Kwang-yoo Byun, and Hae-bong Park
Company: Hynix Semiconductor Inc. and SEC Co. Ltd.
Date Published: 10/11/2010   Conference: IWLPC (Wafer-Level Packaging)

Abstract: As Moore predicted in 1965, the scale of microelectronic devices continues to reduce at tremendous speed and today the limitations of conventional 2D scaling make such 3D applications as TSV (through-silicon via) and high-stacked thin-die packaging technologies extremely attractive. Because of their complicated and delicate structure, however, failure analysis of these applications currently has several critical intrinsic problems, among them nano-level chip cracking in thin dies, filling characterization of TSV, and micro-crack and void of flip-chip bumps.

Naturally, traditional analysis methods are commercially available for these failure modes: chemical decapsulation for die-cracking and cross-sectional analysis for TSV defects and bump cracking. These techniques, however, are destructive and also have reached performance limits because of drawbacks such as the residual-stress effect in abrupt decapsulation release and the mechanical shock of physical cross-sectioning. Unfortunately, conventional nondestructive analysis (NDA) techniques cannot be directly applied in these cases because of intrinsic measurement limitations. For example, X-ray, a representative NDA source, penetrates ceramic chips well and thus is unavailable for chip-crack detection. Ultrasonic waves, another NDA source, are interfered with by the ceramic epoxy molding filler and so cannot be used for multi-stacked applications, even if ultra-high frequency SAT (scanning acoustic tomography) is used. We have attempted to modify conventional analytic procedures to apply special detection sources or materials in order to overcome these limitations through the computational tomography technique, and we describe several results of this work.

Keywords: CT (Computational Tomography); TSV (through silicon via); High-stacked thin-die packaging; NDA (non-destructive analysis); Oblique and cone-beam scanning.

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