IWLPC (Wafer-Level Packaging) Conference Proceedings


DEPTH MEASUREMENT OF THROUGH SILICON VIA BY USING IR CONFOCAL MICROSCOPE

Authors: Deh-Ming Shyu, Wei-Te Hsu and Yi-Sha Ku
Company: Industrial Technology Research Institute
Date Published: 10/11/2010   Conference: IWLPC (Wafer-Level Packaging)


Abstract: Laser scanning confocal microscope (LSCM) offers the ability to control depth of field, and capability to collect serial optical sections from measurement samples. Thus, it can be used for the measurement of the through silicon via (TSV) depth. In our optical system, the infrared laser source illuminates the wafer from the bottom surface for backside measurement to penetrate a polished silicon surface. The wavelength of the infrared laser source used in LSCM is 1.31um. We developed a novel method to extract the bottom via profile by processing the infrared image of a bottom via. In the experiment, the widths of via are from 30um to 150um and the depths are around 100um. These targets are measured by the IR LSCM system and the results are verified by the cross-section scanning electron microscope (SEM) results.

Key words: laser scanning confocal microscope, through silicon via, infrared light source



Members download articles for free:

Not a member yet?

What else do you get when you join SMTA? Read about all of the benefits that go along with membership.

Notice: Sharing of articles is restricted to just your immediate work group. Downloaded papers should not be stored on an external network or shared on the internet.


Back


SMTA Headquarters
6600 City West Parkway, Suite 300
Eden Prairie, MN 55344 USA

Phone +1 952.920.7682
Fax +1 952.926.1819