Pan Pacific Symposium Conference Proceedings


QUANTITATIVE ANALYSES OF INTERFACIAL PROPERTIES OF Cu-Cu BONDS FOR TSV INTEGRATION

Authors: Bioh Kim, et al.
Company: EV Group and Andong National University
Date Published: 1/26/2010   Conference: Pan Pacific Symposium


Abstract: We performed the quantitative analyses of the interfacial properties of Cu-Cu bonds with varying process parameters such as bonding temperature, chemical pre-treatment, pre-bond annealing and post-bond annealing. A 4-point bending method was used to measure the interfacial adhesion energy. Among all the tested parameters, bonding temperature and post-bond annealing have the most significant influence on the interfacial adhesion energy and interfacial voids. By adjusting those two experimental parameters, we could achieve even with a short bonding time (30min) the sufficient interfacial adhesion energies (greater than or equal to 5 J/m2) with no interfacial seam voids. With increasing bonding temperature from 300ºC to 400ºC, the interfacial adhesion energy increases from 2.8 J/m2 to 5.0 J/m2 and the original bond interface tends to disappear. The post-bond annealing performed at 250-300ºC under N2 atmosphere for 60min, when thermo-compression bonding was done at a low temperature (300ºC), drastically improves the interfacial adhesion energy from 2.8 J/m2 to 8.9 – 12.2 J/m2.

Key words: TSV, Cu-Cu bonds, interfacial adhesion energy.



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