IWLPC (Wafer-Level Packaging) Conference Proceedings


SAPPHIRE WAFER-BASED WAFER-LEVEL CHIP SCALE PACKAGE TYPE HIGH POWER LIGHT-EMITTING DIODE

Author: Kwang Cheol Lee
Company: Korea Photonics Technology Institute (KOPTI)
Date Published: 10/13/2008   Conference: IWLPC (Wafer-Level Packaging)


Abstract: While the market of light-emitting diode (LED) is incessantly growing, the needs of cost reduction and performance improvement are required. Cost reduction is related to process simplification and small form factor. To meet the needs of cost reduction, wafer level packaging has already adopted in LED industry. However, there is much room for improvement of cost reduction because the configuration of wafer level package (WLP) type LED takes the form of a die bonded on carrier substrate such as aluminum nitride (AlN) and silicon (Si). Wafer level packaging for LED focuses on thermal dissipation, optical performance, durability, etc.

Reflecting these requirements, in this paper we report the unique wafer level chip scale package (WL-CSP) type high power LED (HP LED) which has not package frame such as copper alloy lead, aluminum nitride substrate, silicon but electrical insulation layer using photo dielectric resin. Package frame is replaced with sapphire substrate in our study. The white light for illumination is obtained by pumping InGaN/GaN light-emitting layer with the phosphor layer.

We describe the fabrication process and electro-optical properties of a 0603 size sapphire wafer-based WL-CSP type HP LED using photo dielectric resin. This LED mounted on the metal-core PCB delivers feasible performance for illumination application and has good thermal dissipation, even though it has small form factor, 1.6×0.8×0.2 mm3, the same as conventional chip-LED. Consequently sapphire wafer-based WL-CSP type HP LED was successfully achieved.

Keywords: WLP LED, WL-CSP LED, photo dielectric resin, High Power LED



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