SAPPHIRE WAFER-BASED WAFER-LEVEL CHIP SCALE PACKAGE TYPE HIGH POWER LIGHT-EMITTING DIODEAuthor: Kwang Cheol Lee
Company: Korea Photonics Technology Institute (KOPTI)
Date Published: 10/13/2008 Conference: IWLPC (Wafer-Level Packaging)
Reflecting these requirements, in this paper we report the unique wafer level chip scale package (WL-CSP) type high power LED (HP LED) which has not package frame such as copper alloy lead, aluminum nitride substrate, silicon but electrical insulation layer using photo dielectric resin. Package frame is replaced with sapphire substrate in our study. The white light for illumination is obtained by pumping InGaN/GaN light-emitting layer with the phosphor layer.
We describe the fabrication process and electro-optical properties of a 0603 size sapphire wafer-based WL-CSP type HP LED using photo dielectric resin. This LED mounted on the metal-core PCB delivers feasible performance for illumination application and has good thermal dissipation, even though it has small form factor, 1.6×0.8×0.2 mm3, the same as conventional chip-LED. Consequently sapphire wafer-based WL-CSP type HP LED was successfully achieved.
Keywords: WLP LED, WL-CSP LED, photo dielectric resin, High Power LED
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