IWLPC (Wafer-Level Packaging) Conference Proceedings


OPTIMIZATION OF A PHOTOSENSITIVE SPIN-ON DIELECTRIC PROCESS FOR COPPER INDUCTOR COIL AND INTERCONNECT PROTECTION IN RF SoC DEVICES

Authors: Andrew Cooper and Alan Cuthbertson et al.
Company: Atmel Corporation and Rohm and Haas Electronic Materials LLC
Date Published: 9/17/2007   Conference: IWLPC (Wafer-Level Packaging)


Abstract: Manufacturing processes used in advanced packaging of semiconductor devices continually evolve. Materials are developed to meet the challenging process requirements of adding functionality in new package designs. The continuing sophistication of wafer-level packaging processes increases the technology overlap between what is considered front-end and back-end in semiconductor manufacturing.

Back-end interconnect and other packaging processes increasingly occur in front-end facilities at wafer-level and away from the more common die by die type processes. These processes often rely on the photosensitivity of spin-on materials as well as their thermal, electrical and mechanical properties. The fact that the photosensitive dielectric stays on the wafer, is a way of separating these material markets versus standard photoresists. Some of the more common post-passivation polymers are photosensitive polyimides (PSPI), polybenzoxazoles (PBO), benzocyclobutenes (BCB) and epoxies (EPO).

This paper considers two of the above materials used successfully as protective cover coats on Radio Frequency System-On-Chip devices. A summary of the benefits of process change including comparisons of lithographical performance, material properties and product package reliability qualification tests are considered.

Keywords: Photo Dielectric, Intervia-8021, Spin-on Dielectrics, Cover Coat, Protection of Copper Inductors



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