IWLPC (Wafer-Level Packaging) Conference Proceedings


METROLOGY FOR ULTRA-THIN WAFER AND DIE STRENGTH CHARACTERIZATION AND RELATED EDGE DAMAGE AND MODELING CHALLENGES

Authors: David Liu, Anwei Liu, Michael I. Current, Wojtek J
Company: Frontier Semiconductor
Date Published: 11/1/2006   Conference: IWLPC (Wafer-Level Packaging)


Abstract: Thinned (~100 um) Si wafers with various surface damage removal treatments were tested to fracture in ball & ring and 3-point bend geometries. Non-linear displacements and Weibull-like fracture loading was observed in ball & ring tests while linear displacements and failure at much lower loads was observed in a 3-point bend stress geometry.

Keywords: three-point bend, fracture strength, dicing damage



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