WAFER-LEVEL VIA-FIRST 3D INTEGRATION WITH HYBRID-BONDING OF Cu/BCB REDISTRIBUTION LAYERSAuthors: R.J. Gutmann, J.J. McMahon, S. Rao, F. Niklaus and
Company: Rensselaer Polytechnic Institute Center for Integr
Date Published: 11/3/2005 Conference: IWLPC (Wafer-Level Packaging)
After a brief summary of current wafer-level 3D integration platforms, a recently introduced platform that offers the process integration advantage of copper-to-copper (Cu-to-Cu) bonding with the increased adhesion strength and environmental robustness of dielectric adhesive bonding using benzocyclobutene (BCB) is discussed. Critical processing challenges of the new platform include BCB partial curing compatible with damascene patterning, postdamascene-patterning cleaning and surface activation, bonding process parameters, and wafer-level planarization requirements. The inherent incorporation of a redistribution layer into the bonding layer process further reduces the process flow and is compatible with wafer-level packaging (WLP) technologies.
Key words: 3D, high-density interconnect, wafer-level, redistribution layers.
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