HIGH-K INSULATION MATERIAL FOR EMBEDDED CAPACITORAuthor: Toshihisa Nonaka
Company: Toray Industries, Inc.
Date Published: 2/25/2005 Conference: Pan Pacific Symposium
The chemical state evaluation of the surface of the filler, which was performed by FT-IR spectroscopic analysis, revealed that the surface absorption water of the filler increased the dielectric loss. After the dispersant was added and the composition of the resin and cure condition was optimized, the dielectric loss of the composite was 0.02 at 1 MHz. The temperature dependence of the dielectric constant was evaluated and showed to be small. Laser via formation process of the composite material was also examined.
It was confirmed that a 100 mm diameter via hole into a 10 µm thick layer could be formed. The in-plane coefficient of thermal expansion of the composite material was 17 ppm/°C, as the obtained by the stress measurement of the film. This value is coincident with the coefficient of thermal expansion of Cu. The elastic modulus was measured and found to be 18 GPa at 75 vol.% of the filler.
Key words: Embedded capacitor, SiP, High-K.
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