THREE-DIMENSIONAL INTELLECTUAL SENSORS OF MAGNETIC FIELD ON THE BASE OF HALL EFFECT
Author: Fuad Kasimov Company: Azerbaijan Ntn'l Space Agency Date Published: 1/25/2000
Pan Pacific Symposium
Abstract: Perspectives of using three-dimensional structures, those elements is arranged in isolated oxide film, as well as on substrate have been shown. Most wide opportunities for formation complex microstructures has the technology of re-crystallization of polysilicon films on oxide by laser irradiation. Experimental results on use of laser re-crystallization of silicon layers for formation discrete Hall sensors capable to integration in SOI microsystem are given and their parameters are presented. Key words: poly-Si films, laser re-crystallization, Hall sensor, microsystem.