SINGLE WAFER APPROACH FOR 300 mm FOR UNDER BUMP METAL ETCHINGAuthors: Lucy Chen, David Chen, and Jackie Chen
Company: SEZ Taiwan
Date Published: 10/10/2004 Conference: IWLPC (Wafer-Level Packaging)
These conventional approaches are subject to issues of non-uniformity that are related to poor control of chemical distribution across the wafer surface and between parallel wafer surfaces. In this paper we present the results of UBM etching using a single wafer spin processor that can provide a solution for stringent undercut control of less than 3 µm while maintaining a throughput comparable to conventional batch (wet bench) system. We have successfully demonstrated UBM etch processes for Ti/NiV/Cu, TiW/Cu, Ti/Cu based bumps with improved etching performance and uniformity.
Members download articles for free:
Not a member yet?
What else do you get when you join SMTA? Read about all of the benefits that go along with membership.
Notice: Sharing of articles is restricted to just your immediate work group. Downloaded papers should not be stored on an external network or shared on the internet.