IWLPC (Wafer-Level Packaging) Conference Proceedings


LASER TECHNOLOGY FOR WAFER DICING AND MICROVIA DRILLING FOR NEXT GENERATION WAFERS

Author: Richard Toftness et al.
Company: Xsil Ltd.
Date Published: 10/10/2004   Conference: IWLPC (Wafer-Level Packaging)


Abstract: Laser micromaching systems are being used in mainstream high-volume semiconductor applications. Two of those processes, via drilling and thin wafer dicing, are discussed in this paper. Via drilling has been proven viable for forming through chip and blind vias. The inherent flexibility of the laser process makes it possible to control via depth, diameter and sidewall slope. As a mask-less process, laser via drilling can be cost affective and highly flexible in its application. Thin wafer dicing reduces the breakage and damage to thin silicon wafers. A new process has been developed that improves the die strength of laser singulated devices beyond that obtained using conventional sawing techniques.

Key words: laser micromachining, laser via drilling, thin wafer dicing, die strength.



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