IWLPC (Wafer-Level Packaging) Conference Proceedings


SURFACE PROPERTY CHARACTERIZATION OF PHOTO DIELECTRIC MATERIAL FOR WAFER LEVEL PACKAGING

Authors: Shijian Luo and Tom Jiang
Company: Micron Technology, Inc.
Date Published: 10/10/2004   Conference: IWLPC (Wafer-Level Packaging)


Abstract: The surface properties of two photo imageable dielectric materials (Material-A and Material-B) were characterized after different process steps. Material-A was cured at two different temperatures 200°C and 250°C. Material-B was cured at two different temperatures 320°C and 350°C. The curing of the materials was analyzed with FTIR. For Material-A, there was no difference between the IR spectra of the two samples cured at 200°C or at 250°C for 90 min.

For Material-B, IR spectra indicated that further reaction took place at a higher temperature 350°C compared to 320°C. The glass transition temperature was around 160°C for Material-A, and 260°C for Material-B. Curing of the two materials at higher temperatures increased the glass transition temperature for several degrees. After curing, the two materials went through dry etch process, and then run through the electroless plating process.

The surface properties were characterized with atomic force microscope (AFM) and x-ray photoelectron spectroscopy (XPS) at different stages: as cured, after dry etch, after electroless plating. Although Material-A was smoother than Material-B in the as cured state, it became significantly rougher after dry-etch and plating. Also the roughening after dry-etch and plating was more pronounced for the Material-A cured at 200°C as compared with the Material-A cured at 250°C.

XPS analysis revealed that Material-A was mainly composed of C, O, and H, while Material-B was mainly composed of C, N, O, F, and H. After dry etch, the surface C concentration decreased for both materials. After plating, the surface C concentration increased, but not to the level of as cured samples.

Keywords: surface analysis, XPS, photo dielectric material, AFM, XPS.



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