Journal of SMT Article


Author: Tung-Sheng Chen
Company: Chung-Cheng Inst. of Tech.
Date Published: 4/1/2000   Volume: 13-2

Abstract: Both implanted resistors and MOSFETs by a commercial CMOS process have been applied as stress sensing devices. Experimental results show that highly consistent piezoresistive coefficients have been extracted through calibration procedure for the resistors. In addition, agreeable trends of electrical parametric shift in accordance with external stress have been observed for the MOSFETs. These results suggest that piezoresistors and MOSFETs are capable of monitoring externally applied stress on semiconductor chips. Therefore, both piezoresistors and MOSFETs are suitable for nondestructive in-situ mechanical stress measurement in microelectronic packaging.

Key words: piezoresistors, MOSFETs, mechanical stress.

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